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Evidence of segregation in (100) strained Si1−x Ge x alloys grown at low temperature by molecular beam epitaxy
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10.1063/1.102787
/content/aip/journal/apl/56/4/10.1063/1.102787
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/4/10.1063/1.102787
/content/aip/journal/apl/56/4/10.1063/1.102787
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/content/aip/journal/apl/56/4/10.1063/1.102787
1990-01-22
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of segregation in (100) strained Si1−xGex alloys grown at low temperature by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/4/10.1063/1.102787
10.1063/1.102787
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