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A simple method for elimination of gallium‐source related oval defects in molecular beam epitaxy of GaAs
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10.1063/1.102767
/content/aip/journal/apl/56/5/10.1063/1.102767
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/5/10.1063/1.102767
/content/aip/journal/apl/56/5/10.1063/1.102767
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/content/aip/journal/apl/56/5/10.1063/1.102767
1990-01-29
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A simple method for elimination of gallium‐source related oval defects in molecular beam epitaxy of GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/5/10.1063/1.102767
10.1063/1.102767
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