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Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium
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10.1063/1.102771
/content/aip/journal/apl/56/5/10.1063/1.102771
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/5/10.1063/1.102771
/content/aip/journal/apl/56/5/10.1063/1.102771
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/content/aip/journal/apl/56/5/10.1063/1.102771
1990-01-29
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/5/10.1063/1.102771
10.1063/1.102771
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