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Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
1.C. T. Sah, J. Y. C. Sun, and J. J. T. Tzon, J. Appl. Phys. 54, 5864 (1983).
2.N. M. Johnson, R. D. Burnham, R. A. Street, and R. L. Thornton, Phys. Rev. B 33, 1102 (1986).
3.G. R. Antell, A. T. R. Briggs, B. R. Butler, S. A. Kitching, and J. P. Stagg, Appl. Phys. Lett. 53, 758 (1988).
4.M. Glade, D. Grützmacher, R. Meyer, E. G. Woelk, and P. Balk, Appl. Phys. Lett. 54, 2411 (1989).
5.U. Niggebrügge, M. Klug, and G. Garus, Inst. Phys. Conf. Ser. 79, 367 (1986).
6.I. Adesida, E. Andideh, A. Ketterson, T. Brock, and O. Aina, Inst. Phys. Conf. Ser. 96, 425 (1989).
7.R. Kaumanns, N. Grote, H. G. Bach, and F. Fidorra, Inst. Phys. Conf. Ser. 91, 501 (1988).
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