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In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
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10.1063/1.104099
/content/aip/journal/apl/57/10/10.1063/1.104099
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/10/10.1063/1.104099
/content/aip/journal/apl/57/10/10.1063/1.104099
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/content/aip/journal/apl/57/10/10.1063/1.104099
1990-09-03
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insitu etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/10/10.1063/1.104099
10.1063/1.104099
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