In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
1.H. Schwiecker, SPIE. Conference 11/12.01.1988, Los Angeles, 280.
2.U. Niggebrügge, M. Klug, and G. Garus, Inst. Phys. Conf. Ser. 79, 367 (1985).
3.R. M. A. Azzam and N. M. Basbara, Ellipsometry and Polarized Light (North‐Holland, Amsterdam, 1977).
4.N. Vodjdani, J. Vac. Sci. Technol. B 5, 1591 (1987).
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month