1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling
Rent:
Rent this article for
USD
10.1063/1.103511
/content/aip/journal/apl/57/11/10.1063/1.103511
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/11/10.1063/1.103511
/content/aip/journal/apl/57/11/10.1063/1.103511
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/57/11/10.1063/1.103511
1990-09-10
2014-09-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/11/10.1063/1.103511
10.1063/1.103511
SEARCH_EXPAND_ITEM