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Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma‐enhanced chemical vapor deposited silicon nitride cap
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10.1063/1.103512
/content/aip/journal/apl/57/11/10.1063/1.103512
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/11/10.1063/1.103512
/content/aip/journal/apl/57/11/10.1063/1.103512
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/content/aip/journal/apl/57/11/10.1063/1.103512
1990-09-10
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma‐enhanced chemical vapor deposited silicon nitride cap
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/11/10.1063/1.103512
10.1063/1.103512
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