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Electronic properties of a pulse‐doped GaAs structure grown by organometallic vapor phase epitaxy
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10.1063/1.103469
/content/aip/journal/apl/57/13/10.1063/1.103469
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/13/10.1063/1.103469
/content/aip/journal/apl/57/13/10.1063/1.103469
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/content/aip/journal/apl/57/13/10.1063/1.103469
1990-09-24
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of a pulse‐doped GaAs structure grown by organometallic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/13/10.1063/1.103469
10.1063/1.103469
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