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Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
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10.1063/1.103474
/content/aip/journal/apl/57/13/10.1063/1.103474
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/13/10.1063/1.103474
/content/aip/journal/apl/57/13/10.1063/1.103474
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/content/aip/journal/apl/57/13/10.1063/1.103474
1990-09-24
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/13/10.1063/1.103474
10.1063/1.103474
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