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Behavior of the first layer growth in GaAs molecular beam epitaxy
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10.1063/1.103445
/content/aip/journal/apl/57/14/10.1063/1.103445
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/14/10.1063/1.103445
/content/aip/journal/apl/57/14/10.1063/1.103445
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/content/aip/journal/apl/57/14/10.1063/1.103445
1990-10-01
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Behavior of the first layer growth in GaAs molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/14/10.1063/1.103445
10.1063/1.103445
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