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Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half‐monolayer well‐width fluctuations
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8.K. J. Moore, P. Dawson, and C. T. Foxon, J. de Phys. (Paris) C 5, 525, supplement au n°11, Tome 48 (1987).
9.We neglect variations in the binding energy with changes in well width since the HH and LH excitonic binding energies vary by only 0.1 meV/monolayer. For example, see R. C. Miller, D. A. Kleinman, W. T. Tsang, and A. C. Gossard, Phys. Rev. B 24, 1134 (1981).
10.V. S. Speriosu and T. Vreeland Jr. , J. Appl. Phys. 56, 1591 (1984).
11.The X valley in AlAs consists of two states, and These two states experience negligible QCE shifts in wells. For example, the and states have masses and respectively and experience QCE shifts of and respectively, for a one monolayer change in the AlAs layer thickness. The order of the X conduction‐band valleys in type H GaAs/AlAs quantum wells consisting of AlAs layers is such that valley is split below the valley by lattice‐mismatch strain splitting [see H. W. van Kesteren, E. C. Cosman, P. Dawson, K. J. Moore, and C. T. Foxon, Phys. Rev. B 39, 13426 (1989)]
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15.The binding energies for the HH and LH excitons obtained from the experimental fits are 13 and 16 meV, somewhat larger than the 12 and 14 meV binding energies calculated for GaAs/AlGaAs quantum wells [sec R. C. Miller, D. A. Kleinman, W. T. Tsang, and A. C. Gossard, Phys. Rev. B 24, 1134 (1981)]
15.reflecting the enhanced binding energy with increased barrier height for AlAs barriers [see K. J. Moore, P. Dawson, and C. T. Foxon, Phys. Rev. B 34, 6022 (1986)].
16.M. Tanaka and H. Sakaki, J. Cryst. Growth 81, 153 (1987).
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