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Suppression of lateral silicide formation in submicron TiSi2 ohmic contacts to heavily doped p‐type silicon
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10.1063/1.103450
/content/aip/journal/apl/57/14/10.1063/1.103450
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/14/10.1063/1.103450
/content/aip/journal/apl/57/14/10.1063/1.103450
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/content/aip/journal/apl/57/14/10.1063/1.103450
1990-10-01
2014-12-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of lateral silicide formation in submicron TiSi2 ohmic contacts to heavily doped p‐type silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/14/10.1063/1.103450
10.1063/1.103450
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