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Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement
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10.1063/1.104077
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    Affiliations:
    1 Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan
    2 Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan
    3 Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan
    Appl. Phys. Lett. 57, 1651 (1990); http://dx.doi.org/10.1063/1.104077
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/content/aip/journal/apl/57/16/10.1063/1.104077
1990-10-15
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/16/10.1063/1.104077
10.1063/1.104077
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