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Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies
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10.1063/1.104059
/content/aip/journal/apl/57/17/10.1063/1.104059
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/17/10.1063/1.104059
/content/aip/journal/apl/57/17/10.1063/1.104059
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/content/aip/journal/apl/57/17/10.1063/1.104059
1990-10-22
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/17/10.1063/1.104059
10.1063/1.104059
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