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Impact ionization in the base of a hot‐electron AlSb/InAs bipolar transistor
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10.1063/1.104063
/content/aip/journal/apl/57/17/10.1063/1.104063
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/17/10.1063/1.104063
/content/aip/journal/apl/57/17/10.1063/1.104063
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/content/aip/journal/apl/57/17/10.1063/1.104063
1990-10-22
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact ionization in the base of a hot‐electron AlSb/InAs bipolar transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/17/10.1063/1.104063
10.1063/1.104063
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