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Near‐band‐gap photoluminescence of Si1−x Ge x alloys grown on Si(100) by molecular beam epitaxy
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10.1063/1.104014
/content/aip/journal/apl/57/18/10.1063/1.104014
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/18/10.1063/1.104014
/content/aip/journal/apl/57/18/10.1063/1.104014
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/content/aip/journal/apl/57/18/10.1063/1.104014
1990-10-29
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near‐band‐gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/18/10.1063/1.104014
10.1063/1.104014
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