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Peak electron mobilities between 2.75 and 3.32×105 cm2 V 1 s 1 in GaAs grown by molecular beam epitaxy with As2
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10.1063/1.103988
/content/aip/journal/apl/57/19/10.1063/1.103988
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/19/10.1063/1.103988
/content/aip/journal/apl/57/19/10.1063/1.103988
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/content/aip/journal/apl/57/19/10.1063/1.103988
1990-11-05
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Peak electron mobilities between 2.75 and 3.32×105 cm2 V−1 s−1 in GaAs grown by molecular beam epitaxy with As2
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/19/10.1063/1.103988
10.1063/1.103988
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