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Effect of AlGaAs window and buffer layers on the response characteristics of GaAs photoconductive detectors
1.See, for example, N. Matsuo, H. Ohno, and H. Hasegawa, Jpn. J. Appl. Phys. 23, L648 (1984).
2.See, for example, S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 13.
3.D. E. Holmes, R. T. Chen, K. R. Elliott, C. G. Kirkpatrick, and P. W. Yu, IEEE Trans. Electron Devices ED‐23, 1045 (1982).
4.R. J. Nelson and R. G. Sobers, Appl. Phys. Lett. 32, 761 (1978).
5.A. Chandra, C. E. C. Wood, D. W. Woodard, and L. F. Eastman, Solid‐State Electron. 22, 645 (1979).
6.R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960), Chap. 5.
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