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I n s i t u doping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition
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10.1063/1.103993
/content/aip/journal/apl/57/19/10.1063/1.103993
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/19/10.1063/1.103993
/content/aip/journal/apl/57/19/10.1063/1.103993
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/content/aip/journal/apl/57/19/10.1063/1.103993
1990-11-05
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insitu doping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/19/10.1063/1.103993
10.1063/1.103993
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