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Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In x Ga1−x As on GaAs(100)
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10.1063/1.103914
/content/aip/journal/apl/57/20/10.1063/1.103914
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/20/10.1063/1.103914
/content/aip/journal/apl/57/20/10.1063/1.103914
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/content/aip/journal/apl/57/20/10.1063/1.103914
1990-11-12
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/20/10.1063/1.103914
10.1063/1.103914
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