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High‐energy (56 MeV) oxygen implantation in Si, GaAs, and InP
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10.1063/1.103906
/content/aip/journal/apl/57/21/10.1063/1.103906
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/21/10.1063/1.103906
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/content/aip/journal/apl/57/21/10.1063/1.103906
1990-11-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐energy (56 MeV) oxygen implantation in Si, GaAs, and InP
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/21/10.1063/1.103906
10.1063/1.103906
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