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p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon
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10.1063/1.103907
/content/aip/journal/apl/57/21/10.1063/1.103907
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/21/10.1063/1.103907
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/content/aip/journal/apl/57/21/10.1063/1.103907
1990-11-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/21/10.1063/1.103907
10.1063/1.103907
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