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Strain modification in coherent Ge and Si x Ge1−x epitaxial films by ion‐assisted molecular beam epitaxy
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10.1063/1.103877
/content/aip/journal/apl/57/22/10.1063/1.103877
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103877
/content/aip/journal/apl/57/22/10.1063/1.103877
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/content/aip/journal/apl/57/22/10.1063/1.103877
1990-11-26
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain modification in coherent Ge and SixGe1−x epitaxial films by ion‐assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103877
10.1063/1.103877
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