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Photoluminescence and reflection high‐energy electron diffraction study of GaAs/Al x Ga1−x As(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2 and As4) of arsenic
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10.1063/1.103885
/content/aip/journal/apl/57/22/10.1063/1.103885
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103885
/content/aip/journal/apl/57/22/10.1063/1.103885
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/content/aip/journal/apl/57/22/10.1063/1.103885
1990-11-26
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence and reflection high‐energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2 and As4) of arsenic
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103885
10.1063/1.103885
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