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p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
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10.1063/1.103889
/content/aip/journal/apl/57/22/10.1063/1.103889
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103889
/content/aip/journal/apl/57/22/10.1063/1.103889
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/content/aip/journal/apl/57/22/10.1063/1.103889
1990-11-26
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/22/10.1063/1.103889
10.1063/1.103889
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