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Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air
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10.1063/1.103869
/content/aip/journal/apl/57/23/10.1063/1.103869
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/23/10.1063/1.103869
/content/aip/journal/apl/57/23/10.1063/1.103869
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/content/aip/journal/apl/57/23/10.1063/1.103869
1990-12-03
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/23/10.1063/1.103869
10.1063/1.103869
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