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X‐ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface
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10.1063/1.104198
/content/aip/journal/apl/57/26/10.1063/1.104198
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/26/10.1063/1.104198
/content/aip/journal/apl/57/26/10.1063/1.104198
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/content/aip/journal/apl/57/26/10.1063/1.104198
1990-12-24
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X‐ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/26/10.1063/1.104198
10.1063/1.104198
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