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Copper silicide formation by rapid thermal processing and induced room‐temperature Si oxide growth
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10.1063/1.104105
/content/aip/journal/apl/57/4/10.1063/1.104105
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/4/10.1063/1.104105
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/content/aip/journal/apl/57/4/10.1063/1.104105
1990-07-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper silicide formation by rapid thermal processing and induced room‐temperature Si oxide growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/4/10.1063/1.104105
10.1063/1.104105
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