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Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine
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10.1063/1.103631
/content/aip/journal/apl/57/5/10.1063/1.103631
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/5/10.1063/1.103631
/content/aip/journal/apl/57/5/10.1063/1.103631
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/content/aip/journal/apl/57/5/10.1063/1.103631
1990-07-30
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/5/10.1063/1.103631
10.1063/1.103631
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