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Spatial resolution of the capacitance‐voltage profiling technique on semiconductors with quantum confinement
1.The ability to resolve impurity distributions in semiconductors by the C‐V technique is limited by the Debye screening length. See, for example, D. P. Kennedy, P. C. Murley, and W. Kleinfelder, IBM J. Res. Develop. 12, 399 (1968).
1.The finite resolution capability was experimentally verified by A. Y. Cho, J. Appl. Phys. 46, 1733 (1975).
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8.For a recent review on δ doping of III‐V semiconductors, see E. F. Schubert, J. Vac. Sci. Technol. A 8, 2980 (1990).
9.The resolution of the C‐V profiling technique as given by Eq. (13) is rigorously valid if the ground state only is occupied and thermal population of excited states is negligible (i.e., Since the majority of carriers in δ‐doped structures occupies the ground state, Eq. (13) remains approximately valid. Moreover, the effect of temperature on the C‐V profile width is small, that is typically on the order of
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11.R. B. Beall, J. B. Clegg, and J. J. Harris, Semicond. Sci. Technol. 3, 612 (1988);
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12.Chris Webb, Appl. Phys. Lett. 54, 2091 (1989).
13.T. N. Theis, P. M. Mooney, and S. L. Wright, Phys. Rev. Lett. 60, 361 (1988).
14.It was previously shown that the integrated C‐V concentration equals the free‐carrier density;
14.H. Kroemer and W. Y. Chien, Solid‐State Electron. 24, 655 (1981).
15.The Hall density in a multicarrier type structure is given by See, for example, T. S. Moss, ed., Handbook on Semiconductors (North‐Holland, New York, 1982). The Hall density is therefore a lower limit of the carrier density. Furthermore, the Hall factor is neglected in Fig. 4.
16.A. Zrenner, Appl. Phys. Lett. 55, 156 (1989);
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