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Excellent uniformity of threshold voltage of Si planar‐doped AlInAs/GaInAs heterointerface field‐effect transistors grown by metalorganic chemical vapor deposition
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10.1063/1.103666
/content/aip/journal/apl/57/5/10.1063/1.103666
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/5/10.1063/1.103666
/content/aip/journal/apl/57/5/10.1063/1.103666
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/content/aip/journal/apl/57/5/10.1063/1.103666
1990-07-30
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excellent uniformity of threshold voltage of Si planar‐doped AlInAs/GaInAs heterointerface field‐effect transistors grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/5/10.1063/1.103666
10.1063/1.103666
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