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Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
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10.1063/1.103608
/content/aip/journal/apl/57/6/10.1063/1.103608
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/6/10.1063/1.103608
/content/aip/journal/apl/57/6/10.1063/1.103608
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/content/aip/journal/apl/57/6/10.1063/1.103608
1990-08-06
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/6/10.1063/1.103608
10.1063/1.103608
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