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Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H1 0/HCl/H2 gas system
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10.1063/1.103611
/content/aip/journal/apl/57/6/10.1063/1.103611
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/6/10.1063/1.103611
/content/aip/journal/apl/57/6/10.1063/1.103611
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/content/aip/journal/apl/57/6/10.1063/1.103611
1990-08-06
2014-11-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2 gas system
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/6/10.1063/1.103611
10.1063/1.103611
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