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Reflection high‐energy electron diffraction studies of the growth of strained In x Ga1−x As on GaAs substrate by migration‐enhanced epitaxy
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10.1063/1.103594
/content/aip/journal/apl/57/7/10.1063/1.103594
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/7/10.1063/1.103594
/content/aip/journal/apl/57/7/10.1063/1.103594
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/content/aip/journal/apl/57/7/10.1063/1.103594
1990-08-13
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reflection high‐energy electron diffraction studies of the growth of strained InxGa1−xAs on GaAs substrate by migration‐enhanced epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/57/7/10.1063/1.103594
10.1063/1.103594
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