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Controlled sublimation growth of single crystalline 4H‐SiC and 6H‐SiC and identification of polytypes by x‐ray diffraction
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10.1063/1.104443
/content/aip/journal/apl/58/1/10.1063/1.104443
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/1/10.1063/1.104443
/content/aip/journal/apl/58/1/10.1063/1.104443
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/content/aip/journal/apl/58/1/10.1063/1.104443
1991-01-07
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled sublimation growth of single crystalline 4H‐SiC and 6H‐SiC and identification of polytypes by x‐ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/1/10.1063/1.104443
10.1063/1.104443
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