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In‐based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor
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10.1063/1.104350
/content/aip/journal/apl/58/11/10.1063/1.104350
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104350
/content/aip/journal/apl/58/11/10.1063/1.104350
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/content/aip/journal/apl/58/11/10.1063/1.104350
1991-03-18
2015-05-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In‐based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104350
10.1063/1.104350
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