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Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure
1.E. S. Snow, S. W. Kirchoefer, and O. J. Glerabocki, Appl. Phys. Lett. 54, 2023 (1989).
2.Impact ionization and EL from a GaAs-GaAlAs superlattice has been reported recently by M. Helm, J. E. Golub, and E. Colas, Appl. Phys. Lett. 56, 1356 (1990).
3.V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. B 35, 9387 (1987).
4.L. Eaves, G. A. Toorrbs, F. W. Sheard, C. A. Payling, M. L. Leadbeater, E. S. Alves, T. J. Foster, P. E. Simmonds, M. Henini, O. H. Hughes, J. C. Portal, G. Hill, and M. A. Pate, Appl. Phys. Lett. 52, 212 (1988).
5.M. S. Skolnick, D. G. Hayes, P. E. Simmonds, A. W. Higgs, G. W. Smith, H. J. Hutchinson, C. R. Whitehouse, L. Eaves, M. Henini, O. H. Hughes, M. L. Leadbeiter, and D. P. Halliday, Phys. Rev. B 41, 1074 (1990).
6.M. L. Leadbeater, L. Eaves, M. Henini, O. H. Hughes, G. Hill, and M. A. Pate, Solid State Electron 32, 1467 (1989).
7.V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987).
8.T. P. Pearsall, F. Capasso, R. E. Nahory, M. A. Pollack, and J. R. Chelikowsky, Solid State Electron 21, 297 (1978).
9.Photoluminescence experiments reported in reference 5 on a similar structure, but with a thinner collector barrier of 110 Å, show that of holes drifting towards the collector barrier tunnel into the QW, the rest passing cirectly over the barriers into the GaAs.
10.C. R. H. White, M. S. Skolnick, L. Eaves, M. Henini, O. H. Hughes, G. Hill, and M. A. Pate (unpublished).
11.The results in Fig. 2(b) are obtained from the integrated area of the QW emission peak as a function of bias. Figure 2(c) is obtained by scanning the bias at a fixed wavelength since there is no shift or change in width of the e-h peak with bias.
12.M. S. Skolnick, P. E. Simmonds, D. G. Hayes, A. W. Higgs, G. W. Smith, A. D. Pitt, C. R. Whitehouse, H. J. Hutchinson, C. R. H. White, L. Eaves, M. Henini, and O. H. Hughes, Phys. Rev. B 42, 3069 (1990).
13.We estimate a maximum systematic error in the absolute intensity determination of a factor of 5.
14.This calculation of d is equivalent to correction for “dead space” effects as discussed by G. E. Stillman and C. M. Wolfe, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1977), Vol. 12, p. 333.
15.G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. E. Stillman, IEEE EDL-4, 181 (1983).
16.This corresponds to values of α two orders of magnitude larger at the same electric field.
17.See e.g., R. A. Logan and S. M. Sze, J. Phys. Soc. Jpn. Suppl. 21, 434 (1966).
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