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Formation of highly n‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide
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10.1063/1.104361
/content/aip/journal/apl/58/11/10.1063/1.104361
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104361
/content/aip/journal/apl/58/11/10.1063/1.104361
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/content/aip/journal/apl/58/11/10.1063/1.104361
1991-03-18
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of highly n‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104361
10.1063/1.104361
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