NOTICE:

AIP Publishing manuscript submission and processing system (PXP) is currently unavailable to users in China. We are working to resolve the issue as quickly as possible. We apologize for the inconvenience.

尊敬的中国作者和评审人:AIP Publishing (AIP出版公司) 的论文发布系统(PXP)目前遇到一些技术问题。我们将为您尽快解决。因此带来的不便,我们向您表达我们诚挚的歉意!

Thank you for your patience during this process.

1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth
Rent:
Rent this article for
USD
10.1063/1.104390
/content/aip/journal/apl/58/11/10.1063/1.104390
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104390
/content/aip/journal/apl/58/11/10.1063/1.104390
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/58/11/10.1063/1.104390
1991-03-18
2015-05-06
Loading

Full text loading...

This is a required field
Please enter a valid email address

Oops! This section, does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/11/10.1063/1.104390
10.1063/1.104390
SEARCH_EXPAND_ITEM