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Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation
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10.1063/1.104312
/content/aip/journal/apl/58/13/10.1063/1.104312
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.104312
/content/aip/journal/apl/58/13/10.1063/1.104312
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/content/aip/journal/apl/58/13/10.1063/1.104312
1991-04-01
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.104312
10.1063/1.104312
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