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Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine
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10.1063/1.104320
/content/aip/journal/apl/58/13/10.1063/1.104320
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.104320
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/content/aip/journal/apl/58/13/10.1063/1.104320
1991-04-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.104320
10.1063/1.104320
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