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Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition
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10.1063/1.105184
/content/aip/journal/apl/58/13/10.1063/1.105184
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.105184
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/content/aip/journal/apl/58/13/10.1063/1.105184
1991-04-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/13/10.1063/1.105184
10.1063/1.105184
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