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Raman scattering from In x Ga1−x As/GaAs strained‐layer superlattices
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10.1063/1.105181
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    Affiliations:
    1 Department of Physics, Fudan University, Shanghai 200 433, People’s Republic of China
    2 Department of Physics, Fudan University, Shanghai 200 433, People’s Republic of China
    3 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200 083, People’s Republic of China
    4 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200 083, People’s Republic of China, and Center for Condensed Matter, CCAST (World Laboratory), P. O. Box 8730, Beijing 100 080, People’s Republic of China
    Appl. Phys. Lett. 58, 1491 (1991); http://dx.doi.org/10.1063/1.105181
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/content/aip/journal/apl/58/14/10.1063/1.105181
1991-04-08
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/14/10.1063/1.105181
10.1063/1.105181
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