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Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
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10.1063/1.105114
/content/aip/journal/apl/58/16/10.1063/1.105114
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/16/10.1063/1.105114
/content/aip/journal/apl/58/16/10.1063/1.105114
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/content/aip/journal/apl/58/16/10.1063/1.105114
1991-04-22
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/16/10.1063/1.105114
10.1063/1.105114
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