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Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
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10.1063/1.105036
/content/aip/journal/apl/58/18/10.1063/1.105036
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/18/10.1063/1.105036
/content/aip/journal/apl/58/18/10.1063/1.105036
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/content/aip/journal/apl/58/18/10.1063/1.105036
1991-05-06
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/18/10.1063/1.105036
10.1063/1.105036
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