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Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures
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10.1063/1.104897
/content/aip/journal/apl/58/20/10.1063/1.104897
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/20/10.1063/1.104897
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/content/aip/journal/apl/58/20/10.1063/1.104897
1991-05-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/20/10.1063/1.104897
10.1063/1.104897
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