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Influence of crystal imperfection on high‐resolution diffraction profiles of silicon single crystals measured by highly collimated x‐ray beams
1.T. Ishikawa, Rev. Sci. Instrum. 60, 2490 (1989).
2.J. R. Schneider, H. Nagasawa, L. E. Berman, J. B. Hastings, D. P. Siddons, and W. Zulebner, Nucl. Instrum. Methods A 276, 636 (1989).
3.S. Kawado, S. Kojima, Y. Kato, H. Hayashi, and T. Ishikawa, in Defect Control In Semiconductors, edited by K. Sumino (Elsevier, Amsterdam. 1990), p. 175.
4.T. Ishikawa, in Semiconductor Silicon 1990, edited by H. R. Huff, K. G. Barraclough, and J-i. Chikawa (The Electrochemical Society, Pennington, NJ, 1990), p. 951.
5.T. Ishikawa, J. Cryst. Growth 103, 131 (1990).
6.T. Ishikawa, Acta Crystallogr. A 44, 496 (1988).
7.T. Ishikawa, J. Matsui, and T. Kitano, Nuclear Instrum. Methods A 246, 613 (1986).
8.W. H. Zachariasen, Theory of X-ray Diffraction in Crystals (Dover, New York, 1967).
9.T. Suzuki, N. Isawa, K. Hoshi, Y. Kato, and Y. Okubo. in Semiconductor Silicon 1986, edited by H. R. Huff, T. Abe, and B. Kolbesen (The Electrochemical Society, Pennington, NJ, 1986), p. 142.
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