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Variations of resonant tunneling properties with temperature in strained Si1−x Ge x /Si double‐barrier structures
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10.1063/1.104856
/content/aip/journal/apl/58/22/10.1063/1.104856
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/22/10.1063/1.104856
/content/aip/journal/apl/58/22/10.1063/1.104856
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/content/aip/journal/apl/58/22/10.1063/1.104856
1991-06-03
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double‐barrier structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/22/10.1063/1.104856
10.1063/1.104856
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