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Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates
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10.1063/1.104862
/content/aip/journal/apl/58/22/10.1063/1.104862
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/22/10.1063/1.104862
/content/aip/journal/apl/58/22/10.1063/1.104862
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/content/aip/journal/apl/58/22/10.1063/1.104862
1991-06-03
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/22/10.1063/1.104862
10.1063/1.104862
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