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Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
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10.1063/1.104613
/content/aip/journal/apl/58/5/10.1063/1.104613
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/5/10.1063/1.104613
/content/aip/journal/apl/58/5/10.1063/1.104613
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/content/aip/journal/apl/58/5/10.1063/1.104613
1991-02-04
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
http://aip.metastore.ingenta.com/content/aip/journal/apl/58/5/10.1063/1.104613
10.1063/1.104613
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